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2SB1015Y

Description
TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size84KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SB1015Y Overview

TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

2SB1015Y Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9 MHz
Base Number Matches1

2SB1015Y Related Products

2SB1015Y 2SB1015O
Description TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 3 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 60
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 9 MHz 9 MHz
Base Number Matches 1 1
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