Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
2SC2216
Features
•
•
•
•
Capable of 300mWatts of Power Dissipation.
Collector-current 50mA
Collector-base Voltage 50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
Pin Configuration
Bottom View
E
B
C
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=4.0Vdc, I
C
=0)
DC Current Gain
(I
C
=12.5mAdc, V
CE
=12.5Vdc)
Collector-Emitter Saturation Voltage
(I
C
=15mAdc, I
B
=1.5mAdc)
Base-Emitter Saturation Voltage
(I
C
=15mAdc, I
B
=1.5mAdc)
Transition Frequency
(V
CE
=12.5Vdc, I
C
=12.5mAdc,
f=100MHz)
Min
45
50
4.0
---
---
Max
---
---
---
0.1
0.1
Units
Vdc
Vdc
Adc
uAdc
uAdc
D
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
(BE)sat
fT
40
---
---
300
140
0.2
1.5
---
---
Vdc
Vdc
MHz
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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