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2SK3670(Q)

Description
2SK3670(Q)
CategoryDiscrete semiconductor    The transistor   
File Size164KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SK3670(Q) Overview

2SK3670(Q)

2SK3670(Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SK3670
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3670
Chopper Regulator and DC−DC Converter Applications
2.5V-Gate Drive
Low drain-source ON-resistance: R
DS (ON)
= 1.0
(typ.)
High forward transfer admittance: |Y
fs
| = 2.1 S (typ.)
Low leakage current: I
DSS
= 100
μA
(max) (V
DS
= 150 V)
Enhancement mode: V
th
= 0.5 to 1.3 V (V
DS
= 10 V, I
D
=200
μA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
DC
Drain current
(Note 1)
(Note 1)
Pulse
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 3)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
150
150
±12
0.67
1
3
0.9
41
0.67
0.09
150
−55
to 150
W
mJ
A
mJ
°C
°C
A
Unit
V
V
V
Pulse (t
5s)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
Symbol
R
th (ch−a)
Max
138
Unit
°C / W
3
2
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DS
= 50V、T
ch
= 25°C(initial)、L = 135mH、I
AR
= 0.67A、R
G
= 25Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
1
2009-12-21

2SK3670(Q) Related Products

2SK3670(Q) 2SK3670(F)
Description 2SK3670(Q) 2SK3670(F)
Is it Rohs certified? conform to conform to
Reach Compliance Code unknow unknow
Base Number Matches 1 1

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