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SI2302-TP

Description
Power Field-Effect Transistor, 3A I(D), 20V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size264KB,5 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

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SI2302-TP Overview

Power Field-Effect Transistor, 3A I(D), 20V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC PACKAGE-3

SI2302-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.072 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
SI2302
Features
Halogen
free available upon request by adding suffix "-HF"
20V,3.0A, R
DS(ON)
=55m¡@V
GS
=4.5V
R
DS(ON)
=82m¡@V
GS
=2.5V
High dense cell design for extremely low R
DS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Marking Code: S2
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
b
Operating Junction Temperature
Storage Temperature
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
DS
I
D
I
DM
V
GS
P
D
R
©
JA
T
J
T
STG
Rating
20
3
10
f8
1.25
100
-55 to +150
-55 to +150
Unit
V
A
A
V
W
/W
3
1.GATE
C
B
2. SOURCE
3. DRAIN
1
F
E
2
G
K
H
J
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Internal Block Diagram
D
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
G
.035
.900
.031
.800
S
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 5
2013/01/01

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