2SK210GRTE85R datasheet, PDF - EEWORLD Datasheet

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2SK210GRTE85R: DescriptionTRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size342KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK210GRTE85R Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236, FET RF Small Signal

2SK210GRTE85R Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Configuration	SINGLE
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	0.65 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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2SK210

TOSHIBA Field Effect Transistor

Silicon N Channel Junction Type

2SK210

FM Tuner Applications

VHF Band Amplifier Applications

•

High power gain: G

= 24dB (typ.) (f = 100 MHz)

Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)

High forward transfer admittance: |Y

| = 7 mS (typ.) (f = 1 kHz)

Unit: mm

Absolute Maximum Ratings

(Ta

25°C)

Characteristics

Gate-drain voltage

Gate current

Drain power dissipation

Junction temperature

Storage temperature range

Symbol

GDO

stg

Rating

−18

100

125

−55~125

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high

JEDEC

―

temperature/current/voltage and the significant change in

JEITA

SC-59

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-3F1C

operating temperature/current/voltage, etc.) are within the

Weight: 0.012 g (typ.)

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics

(Ta

25°C)

Characteristics

Gate leakage current

Gate-drain breakdown voltage

Drain current

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

Symbol

GSS

(BR) GDO

DSS

(Note)

GS (OFF)

⎪Y

⎪

iss

rss

Test Condition

= −1.0

V, V

0 V

= −100 μA

0 V, V

10 V

10 V, I

μA

0 V, V

10 V, f

1 kHz

10 V, V

0, f

1 MHz

= −10

V, f

1 MHz

10 V, f

100 MHz (Figure 1)

10 V, f

100 MHz (Figure 1)

Min

⎯

−18

−1.2

⎯

Typ.

⎯

−3

3.5

⎯

1.8

Max

−10

⎯

0.65

⎯

3.5

Unit

Note: I

DSS

classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA

2007-11-01

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