2SC3233
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3233
Switching Regulator and High Voltage Switching
Applications
High Speed DC-DC Converter Applications
·
·
Excellent switching times: t
r
= 1.0 µs (max)
t
f
= 1.0 µs (max), (I
C
= 0.8 A)
High collector breakdown voltage: V
CEO
= 400 V
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
500
400
7
2
0.5
1.0
20
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
―
―
2-7J1A
Weight: 0.36 g (typ.)
1
2002-07-23
2SC3233
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Symbol
I
CBO
I
EBO
V
(BR) CBO
V
(BR) CEO
h
FE
V
CE (sat)
V
BE (sat)
t
r
Test Condition
V
CB
= 400 V, I
E
= 0
V
EB
= 7 V, I
C
= 0
I
C
= 1 mA, I
E
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 5 V, I
C
= 0.1 A
V
CE
= 5 V, I
C
= 1 A
I
C
= 1 A, I
B
= 0.2 A
I
C
= 1 A, I
B
= 0.2 A
OUTPUT
250
Ω
Min
―
―
500
400
20
8
―
―
―
Typ.
―
―
―
―
―
―
―
―
―
Max
100
1
―
―
―
―
1.0
1.5
1.0
V
V
Unit
µA
mA
V
V
20 µs
INPUT
I
B1
I
B1
I
B2
Switching time
Storage time
t
stg
I
B2
V
CC
≈
200 V
―
―
2.5
µs
Fall time
t
f
I
B1
=
−I
B2
= 0.08 A
DUTY CYCLE
≤
1%
―
―
1.0
Marking
C3233
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
2
2002-07-23
2SC3233
I
C
– V
CE
(A)
2.0
1.6
1.2
0.8
0.4
0
0
IB = 10 mA
180
120
2.0
Common emitter
Tc = 25°C
80
60
40
20
1.6
Common emitter
VCE = 5 V
I
C
– V
BE
I
C
Collector current
I
C
(A)
1.2
Tc = 100°C
25
Collector current
−55
2
4
6
8
10
12
14
16
0.8
Collector-emitter voltage
V
CE
(V)
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
h
FE
– I
C
200
Common emitter
Base-emitter voltage V
BE
(V)
h
FE
100
50
30
Tc = 100°C
25
−55
VCE = 5 V
DC current gain
10
r
th
– t
w
1000
Transient thermal resistance
r
th
(°C/W)
5
3
0.001
0.003
0.1
0.3
1
3
10
100
Collector current
I
C
(A)
Curves should be applied in
thermal limited area. (single
nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(2)
10
(1)
1
0.1
0.001
0.01
0.1
1
10
100
1000
Collector-emitter saturation voltage
V
CE (sat)
(V)
V
CE (sat)
– I
C
3
Common emitter
1
0.5
0.3
Tc =
−55°C
100
0.1
0.05
0.03
0.005 0.01
25
IC/IB = 5
Pulse width
tw
(s)
Safe Operating Area
10
0.03
0.1
0.3
1
3
10
5 IC max (pulsed)*
3 IC max
(continuous)
1
0.5
0.3
1 ms*
3 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
10 µs*
100 µs*
500 µs*
Collector current
I
C
(A)
(A)
Base-emitter saturation voltage
V
BE (sat)
(V)
V
BE (sat)
– I
C
5
3
Common emitter
IC/IB = 5
1
0.5
0.3
0.005 0.01
0.03
0.1
25
100
0.3
1
3
10
Tc =
−55°C
Collector current
I
C
0.1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
3
10
30
100
300
1000
Collector current
I
C
(A)
Collector-emitter voltage
V
CE
(V)
3
2002-07-23
2SC3233
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
4
2002-07-23
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