Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, DIMM-168
HYM71V8635ALT6-K Parametric
Parameter Name
Attribute value
Maker
SK Hynix
Parts packaging code
DIMM
package instruction
DIMM, DIMM168
Contacts
168
Reach Compliance Code
compliant
ECCN code
EAR99
access mode
SINGLE BANK PAGE BURST
Maximum access time
5.4 ns
Other features
AUTO/SELF REFRESH
Maximum clock frequency (fCLK)
133 MHz
I/O type
COMMON
JESD-30 code
R-XDMA-N168
memory density
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
memory width
64
Number of functions
1
Number of ports
1
Number of terminals
168
word count
8388608 words
character code
8000000
Operating mode
SYNCHRONOUS
Maximum operating temperature
70 °C
Minimum operating temperature
organize
8MX64
Output characteristics
3-STATE
Package body material
UNSPECIFIED
encapsulated code
DIMM
Encapsulate equivalent code
DIMM168
Package shape
RECTANGULAR
Package form
MICROELECTRONIC ASSEMBLY
power supply
3.3 V
Certification status
Not Qualified
refresh cycle
4096
self refresh
YES
Maximum standby current
0.008 A
Maximum slew rate
0.96 mA
Maximum supply voltage (Vsup)
3.6 V
Minimum supply voltage (Vsup)
3 V
Nominal supply voltage (Vsup)
3.3 V
surface mount
NO
technology
CMOS
Temperature level
COMMERCIAL
Terminal form
NO LEAD
Terminal pitch
1.27 mm
Terminal location
DUAL
HYM71V8635ALT6-K Preview
8Mx64 bits
PC133 SDRAM Unbuffered DIMM
based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V8635AT6 Series
DESCRIPTION
The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
printed circuit board. Two 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V8635AT6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes mem-
ory. The Hynix HYM71V8635AT6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and
outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth.
FEATURES
•
•
•
•
PC133MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.15” (29.21mm) Height PCB with single sided com-
ponents
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
•
•
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
•
Programmable CAS Latency ; 2, 3 Clocks
•
•
•
•
•
•
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM71V8635AT6-K
HYM71V8635AT6-H
HYM71V8635ALT6-K
HYM71V8635ALT6-H
133MHz
4 Banks
4K
Low Power
Clock
Frequency
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.5/Dec. 01
2
PC133 SDRAM Unbuffered DIMM
HYM71V8635AT6 Series
PIN DESCRIPTION
PIN
CK0~CK3
CKE0
/S0, /S2
BA0, BA1
A0 ~ A11
/RAS, /CAS, /WE
DQM0~DQM7
DQ0 ~ DQ63
VCC
V
SS
SCL
SDA
SA0~2
WP
NC
PIN NAME
Clock Inputs
Clock Enable
Chip Select
SDRAM Bank Address
Address
Row Address Strobe, Column
Address Strobe, Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply (3.3V)
Ground
SPD Clock Input
SPD Data Input/Output
SPD Address Input
Write Protect for SPD
No Connection
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CK, CKE and DQM
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
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