2SK1930(2-10S2B) datasheet, PDF

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2SK1930(2-10S2B): DescriptionTRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size841KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK1930(2-10S2B) Overview

TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power

2SK1930(2-10S2B) Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	3.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK1930

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

)

2SK1930

Chopper Regulator, DC−DC Converter, and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

: R

DS (ON)

= 3.0

Ω

(typ.)

: |Y

| = 2.0 S (typ.)

Unit: mm

Low leakage current : I

DSS

= 300

μA

(max) (V

= 800 V)

Enhancement mode : V

= 1.5~3.5 V (V

= 10 V, I

= 1 mA)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Drain−source voltage

Drain−gate voltage (R

= 20 kΩ)

Gate−source voltage

Drain current

(Note 1)

Symbol

DSS

DGR

GSS

stg

Rating

1000

±20

100

150

−55~150

Unit

°C

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

JEDEC

JEITA

TOSHIBA

―

2-10S1B

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Weight: 1.5 g (typ.)

Thermal Characteristics

Characteristics

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Symbol

th (ch–c)

th (ch–a)

Max

1.25

83.3

Unit

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

JEDEC

JEITA

TOSHIBA

―

2-10S2B

Weight: 1.5 g (typ.)

2006-11-09

2SK1930(2-10S2B) Related Products

	2SK1930(2-10S2B)	2SK1930(2-10S1B)	2SK1930TE24R	2SK1930TE24L	2SK1930(TO-220SM)	2SK1930(TO-220FL)
Description	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V	1000 V	1000 V	1000 V	1000 V	1000 V
Maximum drain current (ID)	4 A	4 A	4 A	4 A	4 A	4 A
Maximum drain-source on-resistance	3.8 Ω	3.8 Ω	3.8 Ω	3.8 Ω	3.8 Ω	3.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
Number of components	1	1	1	1	1	1
Number of terminals	2	3	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	YES	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
Is it lead-free?	Contains lead	Contains lead	-	-	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	-	-	incompatible	incompatible
Contacts	3	3	-	-	3	3
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED
Maximum pulsed drain current (IDM)	12 A	12 A	-	-	12 A	12 A
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED

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