2SK1930TE24R datasheet, PDF - EEWORLD Datasheet

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2SK1930TE24R: DescriptionTRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size841KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK1930TE24R Overview

TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

2SK1930TE24R Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	3.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	100 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK1930

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII

)

2SK1930

Chopper Regulator, DC−DC Converter, and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

: R

DS (ON)

= 3.0

Ω

(typ.)

: |Y

| = 2.0 S (typ.)

Unit: mm

Low leakage current : I

DSS

= 300

μA

(max) (V

= 800 V)

Enhancement mode : V

= 1.5~3.5 V (V

= 10 V, I

= 1 mA)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Drain−source voltage

Drain−gate voltage (R

= 20 kΩ)

Gate−source voltage

Drain current

(Note 1)

Symbol

DSS

DGR

GSS

stg

Rating

1000

±20

100

150

−55~150

Unit

°C

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

JEDEC

JEITA

TOSHIBA

―

2-10S1B

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Weight: 1.5 g (typ.)

Thermal Characteristics

Characteristics

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Symbol

th (ch–c)

th (ch–a)

Max

1.25

83.3

Unit

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

JEDEC

JEITA

TOSHIBA

―

2-10S2B

Weight: 1.5 g (typ.)

2006-11-09

2SK1930TE24R Related Products

	2SK1930TE24R	2SK1930(2-10S1B)	2SK1930(2-10S2B)	2SK1930TE24L	2SK1930(TO-220SM)	2SK1930(TO-220FL)
Description	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V	1000 V	1000 V	1000 V	1000 V	1000 V
Maximum drain current (ID)	4 A	4 A	4 A	4 A	4 A	4 A
Maximum drain-source on-resistance	3.8 Ω	3.8 Ω	3.8 Ω	3.8 Ω	3.8 Ω	3.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
Number of components	1	1	1	1	1	1
Number of terminals	2	3	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	YES	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1
Is it lead-free?	-	Contains lead	Contains lead	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	-	incompatible	incompatible
Contacts	-	3	3	-	3	3
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum pulsed drain current (IDM)	-	12 A	12 A	-	12 A	12 A
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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