2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII
.5
)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Enhancement mode
: R
DS (ON)
= 3.0
Ω
(typ.)
: |Y
fs
| = 2.0 S (typ.)
Unit: mm
Low leakage current : I
DSS
= 300 µA (max) (V
DS
= 800 V)
: V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
1000
1000
±20
4
12
100
150
−55~150
Unit
V
V
V
A
W
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-10S1B
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch–c)
R
th (ch–a)
Max
1.25
83.3
Unit
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
―
―
2-10S2B
Weight: 1.5 g (typ.)
1
2006-11-09
2SK1930
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 800 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 2 A
V
DS
= 20 V, I
D
= 2 A
Min
—
—
1000
1.5
—
1.0
—
—
—
—
Typ.
—
—
—
—
3.0
2.0
700
55
100
18
Max
±100
300
—
3.5
3.8
—
—
—
—
—
pF
Unit
nA
µA
V
V
Ω
S
Turn−on time
Switching time
Fall time
t
on
—
30
—
ns
t
f
—
12
—
Turn−off time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 4 A
—
—
—
—
70
60
35
25
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Symbol
I
DR
I
DRP
V
DSF
I
DR
= 4 A, V
GS
= 0 V
Test Condition
—
—
Min
—
—
—
Typ.
—
—
—
Max
4
12
−1.9
Unit
A
A
V
Marking
K1930
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-09
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