Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3710
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SA1452
・Low
collector saturation voltage
・High
speed switching time
APPLICATIONS
・High
current switching applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
80
80
6
12
2
UNIT
V
V
V
A
A
W
℃
℃
T
C
=25℃
30
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=6A;I
B
=0.3A
I
C
=6A;I
B
=0.3A
V
CB
=80V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=1V
I
C
=6A ; V
CE
=1V
I
E
=0 ; V
CB
=10V, f=1MHz
I
C
=1A ; V
CE
=5V
70
40
MIN
80
0.2
0.9
2SC3710
TYP.
MAX
UNIT
V
0.4
1.2
10
10
240
V
V
μA
μA
Switching times
t
on
t
s
t
f
固电
Fall time
导½
半
ANG
CH
IN
Turn-on time
Storage time
MIC
E SE
I
B1
=-I
B2
=0.3A
V
CC
≈30V
,R
L
=5Ω
OR
CT
NDU
O
80
0.2
1.0
0.2
220
pF
MHz
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3710
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3710
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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