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2SC3783

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size232KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC3783 Overview

Transistor

2SC3783 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3783
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 800V(Min)
·High
Switching Speed
APPLICATIONS
·High
speed and high voltage switching applications.
·Switching
regulator applications.
·High
speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
900
V
800
V
7
V
5
A
7
A
3
A
I
C
I
CM
Collector Current-Continuous
Collector Current-Pulse
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
100
W
T
J
150
T
stg
Storage Temperature Range
-55~150
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