Equivalent circuit
C
Darlington
2SD2560
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=10mA
I
C
=10A, I
B
=10mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
B
(7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1647)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
150
150
5
15
1
130(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
2.0
1.8
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.2typ
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
15
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a tu r a t i o n V ol t ag e V
C E (s a t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
( V
CE
=4 V )
10mA
50mA
3mA
2m
A
1.5
mA
1 .0 m A
C o l l e c t o r C u r r e n t I
C
( A)
10
0.5mA
2
C o l l ec t or C u r r e n t I
C
( A )
0 .8 m A
10
eT
emp
)
mp)
e Te
(Cas
25˚C
I
C
= . 15 A
I
C
= . 10 A
1
I
C
= . 5 A
˚C (
5
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
Ba s e - E m i t to r V o l t a ge V
BE
( V )
–30˚
C (C
I
B
=0.3mA
5
125
ase T
Cas
emp)
2
2.2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V )
B as e C ur r en t I
B
( m A)
(V
C E
= 4 V )
50000
D C Cu r r e n t Ga i n h
F E
D C Cu r r e n t Ga i n h
F E
50000
12
5˚C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3.0
Typ
10000
5000
10000
5000
1.0
25
˚C
0.5
–30
˚C
1000
500
02
0. 5
1
C ol l e ct o r C u rren t I
C
(A )
5
10
15
1000
500
02
0 .5
1
C o ll e ct o r C u r r e nt I
C
( A)
5
10
15
0.1
1
10
10 0
Time t(ms)
1 0 0 0 2 00 0
f
T
– I
E
Characteristics
(Typical)
( V
CE
= 1 2 V )
80
50
Safe Operating Area
(Single Pulse)
130
Pc – Ta Derating
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
60
C olle c to r Cu r r e n t I
C
( A )
10
5
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
10
m
10
0m
s
s
DC
100
W
ith
In
fin
ite
he
40
at
si
1
0.5
Without Heatsink
Natural Cooling
nk
50
20
0.1
0
–0.02 –0.05 – 01
– 0. 5
–1
–5
–10
0.05
3
5
10
50
10 0
200
3.5
0
0
Without Heatsink
25
50
75
10 0
125
150
Em i t t er C ur ren t I
E
(A)
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
156
RF/Wirelessly
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