2SK881TE85R datasheet, PDF - EEWORLD Datasheet

2SK881TE85R: DescriptionTRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size105KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK881TE85R Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Other features	CASCODE J-FET
Configuration	SINGLE
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	0.15 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	10 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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