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2SA636AN

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SA636AN Overview

Transistor

2SA636AN Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
DESCRIPTION
·With
TO-202 package
·Complement
to type 2SC1098/1098A
·High
breakdown voltage
·High
transition frequency
APPLICATIONS
·For
audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SA636
V
CEO
Collector-emitter voltage
2SA636A
V
EBO
I
C
I
CM
I
B
B
CONDITIONS
Open emitter
VALUE
-70
-45
UNIT
V
Open base
-60
Open collector
-5
-3
-5
-0.6
T
C
=25℃
10
V
Emitter-base voltage
Collector current
Collector current-peak
Base current
V
A
A
A
P
T
Total power dissipation
T
a
=25℃
1.2
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature

2SA636AN Related Products

2SA636AN 2SA636N 2SA636L 2SA636AM 2SA636K 2SA636 2SA636M 2SA636AK
Description Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1 1
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