Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
DESCRIPTION
·With
TO-202 package
·Complement
to type 2SC1098/1098A
·High
breakdown voltage
·High
transition frequency
APPLICATIONS
·For
audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SA636
V
CEO
Collector-emitter voltage
2SA636A
V
EBO
I
C
I
CM
I
B
B
CONDITIONS
Open emitter
VALUE
-70
-45
UNIT
V
Open base
-60
Open collector
-5
-3
-5
-0.6
T
C
=25℃
10
V
Emitter-base voltage
Collector current
Collector current-peak
Base current
V
A
A
A
P
T
Total power dissipation
T
a
=25℃
1.2
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA636 2SA636A
MIN
TYP.
MAX
UNIT
V
CEsat
Collector-emitter saturation voltage
I
C
=-1.5A ;I
B
=-0.15A
-0.5
-2.0
V
V
BEsat
I
CBO
Base-emitter saturation voltage
I
C
=-1.5A ;I
B
=-0.15A
V
CB
=-45V; I
E
=0
-0.8
-2.0
V
μA
μA
Collector cut-off current
-1
I
EBO
Emitter cut-off current
V
EB
=-3V; I
C
=0
-1
h
FE-1
DC current gain
I
C
=-20mA ; V
CE
=-5V
20
h
FE-2
DC current gain
I
C
=-0.5A ; V
CE
=-5V
40
250
C
OB
Output capacitance
I
E
=0; V
CB
=-10V;f=1MHz
60
pF
f
T
Transition frequency
I
C
=-0.1A ; V
CB
=-5V
45
MHz
h
FE-2
classifications
N
40-60
M
50-100
L
80-160
K
120-250
2
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