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2N5094

Description
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size280KB,6 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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2N5094 Overview

Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin,

2N5094 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1

2N5094 Related Products

2N5094 2N4999 2N5001
Description Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, Transistor Transistor
Reach Compliance Code compli unknow compli
Maximum collector current (IC) 1 A 2 A 2 A
Configuration SINGLE Single Single
Minimum DC current gain (hFE) 20 30 70
Maximum operating temperature 200 °C 175 °C 175 °C
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 2 W 30 W 30 W
surface mount NO NO NO
Nominal transition frequency (fT) 20 MHz 50 MHz 60 MHz
Base Number Matches 1 1 -
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