Transistor
| Parameter Name | Attribute value |
| Maker | SSDI |
| package instruction | , |
| Reach Compliance Code | compli |
| Maximum collector current (IC) | 2 A |
| Configuration | Single |
| Minimum DC current gain (hFE) | 70 |
| Maximum operating temperature | 175 °C |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 30 W |
| surface mount | NO |
| Nominal transition frequency (fT) | 60 MHz |
| 2N5001 | 2N4999 | 2N5094 | |
|---|---|---|---|
| Description | Transistor | Transistor | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin, |
| Reach Compliance Code | compli | unknow | compli |
| Maximum collector current (IC) | 2 A | 2 A | 1 A |
| Configuration | Single | Single | SINGLE |
| Minimum DC current gain (hFE) | 70 | 30 | 20 |
| Maximum operating temperature | 175 °C | 175 °C | 200 °C |
| Polarity/channel type | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 30 W | 30 W | 2 W |
| surface mount | NO | NO | NO |
| Nominal transition frequency (fT) | 60 MHz | 50 MHz | 20 MHz |
| Base Number Matches | - | 1 | 1 |