2SC2655-Y datasheet, PDF - EEWORLD Datasheet

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2SC2655-Y: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size215KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SC2655-Y Overview

Small Signal Bipolar Transistor

2SC2655-Y Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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2SC2655

Elektronische Bauelemente

2A , 50V

NPN Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



TO-92MOD

A

D

Low saturation voltage：V

CE(sat)

=0.5V(Max)(I

C

=1A)

High speed switching time：t

stg

=1μs(Typ.)

Complementary to 2SA1020

K

E

B

CLASSIFICATION OF h

FE (1)

Product-Rank

Range

2SC2655-O

70-140

2SC2655-Y

120-240

F

C

N

G

H

M



Emitter



Collector



Base

L

Millimeter

Min.

Max.

5.50

6.50

8.00

9.00

12.70

14.50

4.50

5.30

0.35

0.65

0.30

0.51

1.50 TYP.

J

Collector



REF.

A

B

C

D

E

F

G

REF.

H

J

K

L

M

N



Base



Emitter

Millimeter

Min.

Max.

1.70

2.05

2.70

3.20

0.85

1.15

1.60 Max

0.00

0.40

4.00 Min

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Rating

50

5

2

0.9

150, -55~150

Unit

V

A

W

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Turn-on Time

Switch Time

Storage Time

Fall Time

http://www.SeCoSGmbH.com/

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE (1)

h

FE (2)

V

CE(sat)

V

BE(sat)

f

T

C

ob

T

on

T

s

T

f

Min.

50

5

-

70

40

-

Typ.

-

100

30

0.15

2

0.15

Max.

-

1

240

-

0.5

1.2

-

Unit

V

μA

Test Conditions

I

C

=100μA, I

E

=0

I

C

=10mA, I

B

=0

I

E

=100μA, I

C

=0

V

CB

=50V, I

E

=0

V

EB

=5V, I

C

=0

V

CE

=2V, I

C

=0.5A

V

CE

=2V, I

C

=1.5A

I

C

=1A, I

B

=0.05A

I

C

=1A, I

B

=0.05A

V

CE

=2V, I

C

=0.5A

V

CB

=10V, I

E

=0, f=1MHz

V

CC

=30V

I

B1

= -I

B2

=0.05A

I

C

=1A

V

MHz

pF

μs

Any changes of specification will not be informed individually.

28-Mar-2011 Rev. A

Page 1 of 3

2SC2655-Y Related Products

	2SC2655-Y	2SC2655-O	2SC2655-Y-C	2SC2655-O-C	2SC2655-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli	compli	compli	compli	compli
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	70	120	70	40
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	1	-

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