EEWORLDEEWORLDEEWORLD

Part Number

Search

2N5096

Description
Power Bipolar Transistor, 1A I(C), 500V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size27KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N5096 Online Shopping

Suppliers Part Number Price MOQ In stock  
2N5096 - - View Buy Now

2N5096 Overview

Power Bipolar Transistor, 1A I(C), 500V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin,

2N5096 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage500 V
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

2N5096 Related Products

2N5096 2N5091 2N5093 MHR0317SA505K70 2N5094 TPS54821_15
Description Power Bipolar Transistor, 1A I(C), 500V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, maximum working voltage Power Bipolar Transistor, 1A I(C), 450V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin, TPS54821 4.5 V to 17 V Input, 8 A Synchronous Step Down SWIFT™ Converter With Hiccup
Is it lead-free? Contains lead Contains lead Contains lead - Contains lead -
Is it Rohs certified? incompatible incompatible incompatible - incompatible -
Reach Compliance Code compli unknown compli - compli -
ECCN code EAR99 EAR99 EAR99 - EAR99 -
Maximum collector current (IC) 1 A 1 A 1 A - 1 A -
Collector-emitter maximum voltage 500 V 350 V 400 V - 450 V -
Minimum DC current gain (hFE) 40 40 40 - 40 -
JEDEC-95 code TO-5 TO-5 TO-5 - TO-5 -
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 - O-MBCY-W3 -
JESD-609 code e0 e0 e0 - e0 -
Number of terminals 3 3 3 - 3 -
Package body material METAL METAL METAL - METAL -
Package shape ROUND ROUND ROUND - ROUND -
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL -
Polarity/channel type PNP PNP PNP - PNP -
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified -
surface mount NO NO NO - NO -
Terminal surface TIN LEAD TIN LEAD TIN LEAD - TIN LEAD -
Terminal form WIRE WIRE WIRE - WIRE -
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM -
Transistor component materials SILICON SILICON SILICON - SILICON -

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1007  2756  575  473  401  21  56  12  10  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号