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2N5096

Description
Power Bipolar Transistor, 1A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size212KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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2N5096 Overview

Power Bipolar Transistor, 1A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, Metal, 3 Pin,

2N5096 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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