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2SA1162-OTE85R

Description
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size168KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA1162-OTE85R Overview

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SA1162-OTE85R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresLOW NOISE
Maximum collector current (IC)0.15 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceNOT SPECIFIED
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SA1162
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1162
Audio Frequency General Purpose Amplifier Applications
High voltage and high current:
V
CEO
=
−50
V, I
C
=
−150
mA (max)
Unit: mm
Excellent h
FE
linearity: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 70~400
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2712
Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−30
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −6
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CE
= −6
V, I
C
= −0.1
mA, f
=
1 kHz,
Rg
=
10 kΩ,
Min
70
80
Typ.
−0.1
4
1.0
Max
−0.1
−0.1
400
−0.3
7
10
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
classification
O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking
1
2007-11-01

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