2SK2993
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2993
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Enhancement mode
: R
DS (ON)
= 82 mΩ (typ.)
: |Y
fs
| = 20 S (typ.)
Unit: mm
Low leakage current : I
DSS
= 100 µA (max) (V
DS
= 250 V)
: V
th
= 1.5~3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
250
250
±20
20
60
100
423
20
10
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
―
2-10S1B
Weight: 1.5 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may
cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
1.25
83.3
Unit
°C / W
°C / W
JEDEC
JEITA
―
―
2-10S2B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 1.79 mH, I
AR
= 20 A, R
G
= 25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
TOSHIBA
Weight: 1.5 g (typ.)
1
2006-11-21
2SK2993
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
200 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 250 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 10 A
Min
—
—
250
1.5
—
10
—
—
—
—
Typ.
—
—
—
—
82
20
4000
300
1000
15
Max
±10
100
—
3.5
105
—
—
—
—
—
pF
Unit
µA
µA
V
V
mΩ
S
Turn−on time
Switching time
Fall time
—
35
—
ns
—
30
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
—
—
—
—
180
100
70
30
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
= 20 A, V
GS
= 0 V
I
DR
= 20 A, V
GS
= 0 V
dI
DR
/ dt = 100 A / µs
Min
—
—
—
—
—
Typ.
—
—
—
300
3.3
Max
20
60
−2.0
—
—
Unit
A
A
V
ns
µC
Marking
K2993
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21
Electronics Design Contest
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