Power Bipolar Transistor, 1A I(C), 500V V(BR)CEO, PNP, Silicon, TO-5, Metal, 3 Pin,
| Parameter Name | Attribute value |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-emitter maximum voltage | 500 V |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-5 |
| JESD-30 code | O-MBCY-W3 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | PNP |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |