2SA1162 datasheet, PDF - EEWORLD Datasheet

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2SA1162: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size75KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SA1162 Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN

2SA1162 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SA1162

2SA1162-O

2SA1162-Y

2SA1162-GR

PNP Silicon

Plastic-Encapsulate

Transistor

SOT-23

Features

•

Capable of 0.15Watts of Power Dissipation.

Collector-current: 0.15A

Collector-base Voltage: -50V

Operating and storage junction temperature range: -55

to +150

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

and MSL Rating 1

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage

=-1mAdc, I

=0)

Collector-Base Breakdown Voltage

=-100uAdc, I

=0)

Emitter-Base Breakdown Voltage

=-100uAdc, I

=0)

Collector Cutoff Current

=-50Vdc, I

=0)

Emitter Cutoff Current

=-5.0Vdc, I

=0)

DC Current Gain

=-2.0mAdc, V

=-6.0Vdc)

Collector-Emitter Saturation Voltage

=-100mAdc, I

=-10mAdc)

Transistor Frequency

=-1.0mAdc, V

=-10Vdcz)

Collector Output Capacitance

=-10Vdc, I

=0, f=1MHz)

Noise Figure

=-6Vdc, I

=0.1mA, f=1KHz, R

=10K¡)

Rank

Range

Marking

70-140

120-240

Min

-50

-5

---

Max

---

-0.1

Units

Vdc

uAdc

OFF CHARACTERISTICS

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

uAdc

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

DIMENSIONS

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

ON CHARACTERISTICS

CE(sat)

---

400

-0.3

---

Vdc

SMALL-SIGNAL CHARACTERISTICS

Cob

---

MHz

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

CLASSIFICATION OF H

FE (1)

200-400

.037

.950

.037

.950

www.mccsemi.com

1 of 2

Revision: 5

2008/01/01

2SA1162 Related Products

	2SA1162	2SA1162-GR	2SA1162-Y	2SA1162-O	2SA1162-TP
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3
Contacts	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	200	120	70	70
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e0	e0	e3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	240	240	240	260
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz	80 MHz	80 MHz
Base Number Matches	1	1	1	1	1
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	-

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