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2SA1162-Y

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size75KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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2SA1162-Y Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN

2SA1162-Y Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SA1162
2SA1162-O
2SA1162-Y
2SA1162-GR
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
Features
Capable of 0.15Watts of Power Dissipation.
Collector-current: 0.15A
Collector-base Voltage: -50V
Operating and storage junction temperature range: -55
to +150
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
and MSL Rating 1
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-1mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=-100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-50Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=-5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=-2.0mAdc, V
CE
=-6.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-100mAdc, I
B
=-10mAdc)
Transistor Frequency
(I
C
=-1.0mAdc, V
CE
=-10Vdcz)
Collector Output Capacitance
(V
CB
=-10Vdc, I
E
=0, f=1MHz)
Noise Figure
(V
CE
=-6Vdc, I
C
=0.1mA, f=1KHz, R
g
=10K¡)
Rank
Range
Marking
O
70-140
SO
Y
120-240
SY
Min
-50
-50
-5
---
---
Max
---
---
---
-0.1
-0.1
Units
Vdc
Vdc
Vdc
uAdc
K
G
C
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
F
E
B
E
H
J
uAdc
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
FE
V
CE(sat)
70
---
400
-0.3
---
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Cob
NF
80
---
---
---
7
10
MHz
pF
dB
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
CLASSIFICATION OF H
FE (1)
GR
200-400
SG
.037
.950
.037
.950
www.mccsemi.com
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Revision: 5
2008/01/01

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Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible incompatible conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC PACKAGE-3
Contacts 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 200 70 70 70
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0 e0 e3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240 240 260
Polarity/channel type PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 10
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1 1
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23 -
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