Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4123
DESCRIPTION
·With
TO-3PML package
·High
breakdown voltage, high reliability
.
·High
speed
·Built
in damper diode
APPLICATIONS
·Ultrahigh-definition
CRT display
·Horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
·
Maximum absolute ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
W
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
7
16
60
UNIT
V
V
V
A
A
W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4123
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
CEO(SUS)
I
EBO
I
CBO
I
CES
h
FE-1
h
FE-2
V
F
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter sustaining voltage
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
Diode forward voltage
CONDITIONS
I
C
=5A;I
B
=1.2 A
I
C
=5A;I
B
=1.2 A
I
C
=100mA;I
B
=0
V
EB
=4V; I
C
=0
V
CB
=800V; I
E
=0
V
CE
=1500V; R
BE
=0
I
C
=1 A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
EC
=7A
8
4
6
2.0
V
800
40
130
10
1
MIN
TYP.
MAX
5
1.5
UNIT
V
V
V
mA
μA
mA
Switching times
t
stg
t
f
Storage time
Fall time
I
C
=5A;R
L
=33.3Ω
I
B1
=1A;- I
B2
=2A
V
CC
=200V
3.0
0.1
0.2
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4123
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4123
4
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