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2SA1255-O

Description
TRANSISTOR 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size254KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1255-O Overview

TRANSISTOR 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

2SA1255-O Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max1 V
Base Number Matches1
2SA1255
TOSHIBA Transistor
Silicon PNP Triple Diffused (PCT process)
2SA1255
High Voltage Switching Applications
High voltage: V
CBO
=
−200
V (min)
V
CEO
=
−200
V (min)
Small package
Complementary to 2SC3138
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−200
−200
−5
−50
−20
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
TOSHIBA
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01

2SA1255-O Related Products

2SA1255-O 2SA1255-Y
Description TRANSISTOR 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
Parts packaging code SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A
Collector-based maximum capacity 7 pF 7 pF
Collector-emitter maximum voltage 200 V 200 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 70 120
JEDEC-95 code TO-236 TO-236
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 1 V 1 V
Base Number Matches 1 1
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