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2SA999

Description
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-43, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size164KB,1 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

2SA999 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, PNP, Silicon, SC-43, 3 PIN

2SA999 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-43
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage50 V
ConfigurationSingle
Minimum DC current gain (hFE)90
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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