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2SK3710A

Description
Power Field-Effect Transistor, 70A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size94KB,3 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

2SK3710A Overview

Power Field-Effect Transistor, 70A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

2SK3710A Parametric

Parameter NameAttribute value
Parts packaging codeTO-220S
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)468 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
2-2 MOS FETs
Specifications List by Part Number
Absolute Maximum Ratings
Part
Number
V
DSS
(V)
2SK2420
2SK2701A
2SK2778
2SK2779
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
2SK3199
2SK3710A
2SK3711
2SK3800
2SK3801
EKV550
FKP202
FKP250A
FKP252
FKP253
FKP280A
FKP300A
FKP330C
FKV460S
FKV550T
FKV550N
FKV575
FKV660S
SKP202
SKP253
60
450
100
100
450
600
900
200
250
500
60
60
40
40
50
200
250
250
250
280
300
330
40
50
50
50
60
200
250
V
GSS
(V)
±20
±30
±20
±20
±30
±30
±30
±20
±20
±30
±20
±20
±20
±20
±20
±30
±30
±30
±30
±30
±30
±30
+20, –10
±20
±20
±20
+20, –10
±30
±30
I
D
(A)
±30
±7
±12
±20
±3
±2
±3
±18
±18
±5
±70
±70
±70
±70
±50
±45
±50
±25
±20
±40
±30
±30
±60
±50
±50
±75
±60
±45
±20
I
D (pulse)
(A)
±120
±28
±48
±80
±12
±8
±12
±72
±72
±20
±140
±140
±140
±140
±150
±180
±200
±100
±
80
±160
±120
±120
±180
±150
±150
±200
±180
±180
±
80
P
D
(W)
40
35
30
35
30
30
30
35
35
30
90
130
80
100
85
40
85
40
40
85
85
85
60
35
35
40
60
95
40
200
160
150
150
300
400
400
150
200
400
200
160
400
400
500
I
GSS
E
AS
(mJ)
38
130
70
200
30
10
60
120
120
35
468
(nA)
max
±100
±100
±100
±100
±100
±100
±100
±100
±100
±100
±10µ
±10µ
±10
±10
±10µ
±100
±100
±100
±100
±100
±100
±100
+10, –5µ
±10µ
±10µ
±100
+10, –5µ
±100
±100
Conditions
V
GS
(V)
±20
±30
±20
±20
±30
±30
±30
±20
±20
±30
±15
+15
±15
±15
±20
±30
±30
±30
±30
±30
±30
±30
+20, –10
±20
±20
±20
+20, –10
±30
±30
I
DSS
(
µ
A)
max
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Conditions
V
DS
(V)
60
450
100
100
450
600
900
200
250
500
60
60
40
40
50
200
250
250
250
280
300
330
40
50
50
50
60
200
250
(V)
min
2.0
2.0
1.0
1.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
1.0
1.0
3.0
3.0
1.0
3.0
3.0
max
4.0
4.0
2.0
2.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.2
4.5
4.5
4.5
4.5
4.5
4.5
4.5
2.5
2.5
4.2
4.5
2.5
4.5
4.5
V
TH
Conditions
V
DS
I
D
(V)
(
µ
A)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
250
1m
250
250
1m
250
1m
1m
1m
1m
1m
1m
1m
1m
250
1m
1m
1m
1m
1m
1m
1m
250
250
250
250
250
1m
1m
min
164
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