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2SC4213-A(T5LUPTLF

Description
Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size276KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4213-A(T5LUPTLF Overview

Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

2SC4213-A(T5LUPTLF Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
2SC4213
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4213
For Muting and Switching Applications
High emitter-base voltage: V
EBO
= 25 V (min)
High reverse h
FE
: Reverse h
FE
= 150 (typ.) (V
CE
=
−2
V, I
C
=
−4
mA)
Low on resistance: R
ON
= 1
(typ.) (I
B
= 5 mA)
High DC current gain: h
FE
= 200 to 1200
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
20
25
300
60
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1987-05
1
2014-03-01

2SC4213-A(T5LUPTLF Related Products

2SC4213-A(T5LUPTLF 2SC4213-A(TE85L,F) 2SC4213BTE85LF
Description Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon TRANS NPN 20V 300MA SC70 TRANS NPN 20V 0.3A USM
Reach Compliance Code unknow unknown -
Maximum collector current (IC) 0.3 A 0.3 A -
Configuration SINGLE Single -
Minimum DC current gain (hFE) 200 200 -
Polarity/channel type NPN NPN -
surface mount YES YES -
Base Number Matches 1 1 -

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