JEIIEU ^E-mi-L-onaactoi i-Pioaueki, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA807
DESCRIPTION
• High Power Dissipation-
: P
c
= 50W(Max.)@T
c
=25°C
• Collector-Emitter Breakdown Voltage-
= -60V(Min.)
APPLICATIONS
• Designed for general purpose applications.
PIN 1.BASE
2. HwllTTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
1
1
r
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-6
A
DIM
A
B
win
MM
MAX
33.00
2S&7
25,30
7,30
E.50
0.90
1.10
1.40
1.60
1092
54$
ll.iO
1350
IB
Base Current-Continuous
Collector Power Dissipation
@T
C
=25'C
Junction Temperature
-3
A
c.
PC
50
W
D
E
_Ji_
H
K
t
Tj
150
'C
N
0
16.75
19.40
400
30,00
1705
1962
420
T
s
tg
Storage Temperature
-65-150
•c
u
V
3020
450
430
NJ Somi-CoiKluctors reserves the right to change test conditions, parameter limits and package dimensions without
nonce. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I louever. N.I Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. "
NJ Semi-Conductors encourages customers to verify that datasheets are current before plucina orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA807
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= -50mA; I
B
= 0
-60
V
VcE(sat)
Collector-Emitter Saturation Voltage
l
c
= -3A; I
B
= -0.3A
-1.5
V
ICBO
Collector Cutoff Current
V
CB
= -60V; I
E
= 0
-1.0
mA
IEBO
Emitter Cutoff Current
V
EB
= -6V; l
c
= 0
-1.0
mA
PFE
DC Current Gain
lo= -3A; V
CE
= -4V
20
fi
Current-Gain— Bandwidth Product
I
E
=0.5A;V
CE
=-12V
10
MHz
Switching times
tr
Rise Time
lc=-3A,R
L
=3n,V
c c
= -10V
!BI= -0.3A; I
B
2= 50mA
1.2
u s
tstg
Storage Time
1.8
u s
tf
Fall Time
0.3
M s