2SC4539TE12R datasheet, PDF - EEWORLD Datasheet

2SC4539TE12R: DescriptionTRANSISTOR 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size87KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SC4539TE12R Overview

TRANSISTOR 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1.2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

	2SC4539TE12R	2SC4539TE12L
Description	TRANSISTOR 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1.2 A	1.2 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PSSO-F3	R-PSSO-F3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.5 V	0.5 V
Base Number Matches	1	1

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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