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2SC1875

Description
Power Bipolar Transistor, 3.5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size100KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Download Datasheet Parametric Compare View All

2SC1875 Overview

Power Bipolar Transistor, 3.5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

2SC1875 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature140 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)0.016 MHz
VCEsat-Max10 V
Base Number Matches1

2SC1875 Related Products

2SC1875 2N4347 2N6253 2N6371 2SC1922
Description Power Bipolar Transistor, 3.5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 15A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin Power Bipolar Transistor, 2.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible conform to conform to conform to incompatible
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compli compli compli compli compli
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 3.5 A 5 A 15 A 12 A 2.5 A
Collector-emitter maximum voltage 500 V 120 V 45 V 40 V 800 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
JEDEC-95 code TO-3 TO-3 TO-3 TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 140 °C 200 °C 200 °C 200 °C 140 °C
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Maximum power consumption environment 50 W 100 W 115 W 60 W 50 W
Maximum power dissipation(Abs) 50 W 100 W 115 W 67 W 50 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1
Minimum DC current gain (hFE) 5 10 20 15 -
Nominal transition frequency (fT) 0.016 MHz 0.2 MHz 0.8 MHz 0.8 MHz -
VCEsat-Max 10 V 2 V - - 5 V
ECCN code - EAR99 EAR99 EAR99 -

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