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2SA1220AQ

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size82KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SA1220AQ Overview

Transistor

2SA1220AQ Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2SA1220/A
DESCRIPTION
·Good
Linearity of h
FE
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= -120V(Min)-2SA1220
= -160V(Min)-2SA1220A
·Complement
to Type 2SC2690/A
APPLICATIONS
·Adudio
frequency power amplifier
·High
frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
2SA1220
V
CBO
Collector-Base Voltage
2SA1220A
2SA1220
V
CEO
Collector-Emitter Voltage
2SA1220A
V
EBO
I
C
I
CM
I
B
B
VALUE
-120
UNIT
V
-160
-120
V
-160
-5
-1.2
-2.5
-0.3
1.2
W
20
150
-55~150
V
A
A
A
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website:www.iscsemi.cn

2SA1220AQ Related Products

2SA1220AQ 2SA1220 2SA1220AR 2SA1220A 2SA1220R 2SA1220Q 2SA1220AP
Description Transistor Transistor Transistor Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1
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