INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
2SA1220/A
DESCRIPTION
·Good
Linearity of h
FE
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= -120V(Min)-2SA1220
= -160V(Min)-2SA1220A
·Complement
to Type 2SC2690/A
APPLICATIONS
·Adudio
frequency power amplifier
·High
frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
2SA1220
V
CBO
Collector-Base Voltage
2SA1220A
2SA1220
V
CEO
Collector-Emitter Voltage
2SA1220A
V
EBO
I
C
I
CM
I
B
B
VALUE
-120
UNIT
V
-160
-120
V
-160
-5
-1.2
-2.5
-0.3
1.2
W
20
150
-55~150
℃
℃
V
A
A
A
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
P
C
Total Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1220/A
TYP.
MAX
UNIT
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.2A
B
-0.7
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= -1A; I
B
= -0.2A
B
-1.3
V
I
CBO
Collector Cutoff Current
V
CB
= -120V; I
E
= 0
-1.0
μA
I
EBO
Emitter Cutoff Current
V
EB
= -3V; I
C
=0
-1.0
μA
h
FE-1
DC Current Gain
I
C
= -5mA ; V
CE
= -5V
35
h
FE-2
DC Current Gain
I
C
= -0.3A ; V
CE
= -5V
60
320
f
T
Current-Gain—Bandwidth Product
I
C
= -0.2A ; V
CE
= -5V
175
MHz
C
OB
Output Capacitance
I
E
= 0; V
CB
= -10V;f
test
= 1.0MHz
26
pF
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
isc Website：www.iscsemi.cn
2
京公网安备 11010802033920号
EEWORLD
