2SJ465
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
−π−MOSV)
2
2SJ465
DC−DC Converter, Relay Drive and Motor Drive
Applications
2.5-V gate drive
Low drain−source ON-resistance
: R
DS (ON)
= 0.54
Ω
(typ.)
High forward transfer admittance : |Y
fs
| = 1.7 S (typ.)
Low leakage current : I
DSS
=
−100 μA
(max) (V
DS
=
−16
V)
Enhancement mode : V
th
=
−0.5
to
−1.1
V
(V
DS
=
−10
V, I
D
=
−200 μA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
Drain power dissipation
Drain power dissipation
Channel temperature
Storage temperature range
(Note 2)
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
T
ch
T
stg
Rating
−16
−16
±8
−2
−6
0.5
1.5
150
−55
to 150
Unit
V
V
V
A
Pulse (Note 1)
JEDEC
W
W
°C
°C
―
―
2−5K1B
JEITA
TOSHIBA
Weight: 0.05 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
R
th (ch−a)
Max
250
Unit
°C / W
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-12-10
2SJ465
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±6.5 V, V
DS
= 0 V
V
DS
=
−16
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
V
DS
=
−10
V, I
D
=
−200 μA
V
GS
=
−2.5
V, I
D
=
−0.5
A
V
GS
=
−4
V, I
D
=
−1
A
V
DS
=
−10
V, I
D
=
−1
A
Min
—
—
−16
−0.5
—
—
0.8
—
—
—
—
Typ.
—
—
—
—
0.82
0.54
1.7
270
25
115
200
Max
±10
−100
—
−1.1
1.0
0.71
—
—
—
—
—
pF
Unit
μA
μA
V
V
Ω
S
Turn−on time
Switching time
Fall time
t
on
—
250
—
ns
t
f
—
200
—
Turn−off time
Total gate charge
(Gate−source plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −16
V, V
GS
=
−5
V, I
D
=
−2
A
—
—
—
—
500
5
3.2
1.8
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
—
—
I
DR
=
−2
A, V
GS
= 0 V
I
DR
=
−2
A, V
GS
= 0 V
dI
DR
/ dt = 50 A /
μs
Min
—
—
—
—
—
Typ.
—
—
—
130
0.13
Max
−2
−6
1.7
—
—
Unit
A
A
V
ns
μC
Marking
Note 4: A line to the right of a Lot No. identifies the indication of
Part No.
product Labels.
(or abbreviation code)
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z
Lot No.
9
Note 4
2
2009-12-10
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