Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage,high speed switching
・High
reliability
APPLICATIONS
・Switching
regulators
・Ultrasonic
generators
・High
frequency inverters
・General
purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3317
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
500
400
7
5
2
UNIT
V
V
V
A
A
W
℃
℃
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
3.13
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=0.2A ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
B
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=500V ;I
E
=0
V
EB
=7V; I
C
=0
I
C
=2A ; V
CE
=5V
MIN
400
400
500
7
TYP.
2SC3317
MAX
UNIT
V
V
V
1.0
1.5
1
V
V
mA
mA
Switching times
t
on
t
stg
t
f
固电
DC current gain
导½
半
ANG
CH
IN
Turn-on time
Storage time
Fall time
MIC
E SE
OR
CT
NDU
O
1
10
0.50
1.50
0.15
μs
μs
μs
I
C
=2.5AI
B1
=0.5A;
I
B2
=-1A;R
L
=60Ω
Pw=20μs ;Duty≤2%
2
京公网安备 11010802033920号
EEWORLD
