Power MOSFETs
2SK3628
Silicon N-channel power MOSFET
(0.7)
Unit: mm
15.0
±0.3
11.0
±0.2
5.0
±0.2
(3.2)
For hihg-speed switching
■
Features
•
Avalanche energy capability guaranteed
•
High-speed switching
•
Low ON resistance R
on
•
No secondary breakdown
21.0
±0.5
φ
3.2
±0.1
15.0
±0.2
16.2
±0.5
(3.2) (2.3)
Solder Dip
2.0
±0.2
1.1
±0.1
2.0
±0.1
0.6
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
*
Power
dissipation
T
a
=
25°C
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
P
D
Rating
230
±30
20
80
570
100
3
150
−55
to
+150
°C
°C
Unit
V
V
A
A
mJ
W
5.45
±0.3
10.9
±0.5
1
2
3
1: Gate
2: Drain
3: Source
TOP-3F-B1 Package
Channel temperature
Storage temperature
Note) *: L
=
2.23 mH, I
L
=
20 A, V
DD
=
50 V, 1 pulse, T
a
=
25°C
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Gate-drain surrender voltage
Diode forward voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source cutoff currentt
Drain-source on resistance
Forward transfer admittance
Short-circuit forward transfer capacitance
(Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
V
DSS
V
DSF
V
th
I
DSS
I
GSS
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
≈
100 V, I
D
= 15 A
R
L
= 6.7
Ω,
V
GS
= 10 V
Conditions
I
D
=
1 mA, V
GS
=
0
I
DR
=
20 A, V
GS
=
0
V
DS
=
25 V, I
D
=
1 mA
V
DS
=
184 V, V
GS
=
0
V
GS
= ±30
V, V
DS
=
0
V
GS
=
10 V, I
D
=
10 A
V
DS
=
25 V, I
D
=
10 A
V
DS
=
25 V, V
GS
=
0, f
=
1 MHz
7
65
14
2 300
330
30
35
26
220
36
1.7
Min
230
−1.5
3.7
100
±1
85
Typ
Max
Unit
V
V
V
µA
µA
mΩ
S
pF
pF
pF
ns
ns
ns
ns
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
SJG00041AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
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(4) The products described in this material are intended to be used for standard applications or general elec-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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