2SA1384
TOSHIBA Transistor
Silicon PNP Triple Diffused Type (PCT process)
2SA1384
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
•
•
•
•
•
•
High voltage: V
CBO
=
−300
V, V
CEO
=
−300
V
Low saturation voltage: V
CE (sat)
=
−0.5
V (max)
Small collector output capacitance: C
ob
= 6 pF (typ.)
Complementary to 2SC3515
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
−300
−300
−8
−100
−20
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
―
SC-62
2-5K1A
Weight: 0.05 g (typ.)
°C
°C
Note 1: 2SA1384 mounted on a ceramic substrate (250 mm
2
× 0.8 mm t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2011-01-24
2SA1384
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note 3)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE (sat)
f
T
C
ob
Test Condition
V
CB
=
−300
V, I
E
= 0A
V
EB
=
−8
V, I
C
=
0A
I
C
=
−0.1
mA, I
E
= 0A
I
C
=
−1
mA, I
B
= 0A
V
CE
=
−10
V, I
C
=
−20
mA
V
CE
=
−10
V, I
C
=
−1
mA
I
C
=
−20
mA, I
B
=
−2
mA
I
C
=
−20
mA, I
B
=
−2
mA
V
CE
=
−10
V, I
C
=
−20
mA
V
CB
=
−20
V, I
E
= 0A, f = 1 MHz
Min
―
―
−300
−300
30
20
―
―
50
―
Typ.
―
―
―
―
―
―
―
―
70
6
Max
−0.1
−0.1
―
―
150
―
−0.5
−1.0
―
8
V
V
MHz
pF
Unit
μA
μA
V
V
Note 3: h
FE (1)
classification R: 30 to 90, O: 50 to 150
Marking
Part No. (or abbreviation code)
J
Lot No.
Characteristics indicator
Note 4
Note 4:
A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January
2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2011-01-24
2SA1384
I
C
– V
CE
(low voltage region)
−100
Common
emitter
Ta
=
25°C
−10
−5
−3
−2
−1
−0.8
−60
−0.6
−0.4
−0.3
−20
−0.2
IB
= −0.1
mA
0
0
0
−2
−4
−6
−8
−10
−12
−14
0
0
−80
−100
Common
emitter
Ta
=
100°C
−10
−5
−3
−2
−1
−0.5
−40
−0.3
−0.2
−20
IB
= −0.1
mA
0
−2
−4
−6
−8
−10
−12
−14
I
C
– V
CE
(low voltage region)
(mA)
Collector current I
C
Collector current I
C
(mA)
−80
−60
−40
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
(low voltage region)
−100
−10
−80
−5
−3
−2
Common
emitter
Ta
= −55°C
−10
−100
−90
−8
I
C
– V
CE
(Low current region)
−80
−70
−60
−50
−6
−40
−4
−30
−20
IB
= −10 μA
0
0
0
Common
emitter
Ta
=
25°C
(mA)
Collector current I
C
−60
−1
−40
−0.8
−0.6
−0.5
−0.4
−0.3
−0.2
IB
= −0.1
mA
−12
−14
−20
Collector current I
C
(mA)
0
−2
−4
−6
−8
−2
0
0
−10
−40
−80
−120
−160
−200
−240
−280
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
(low current region)
−10
−70
−8
−60
−50
Common
emitter
Ta
=
100°C
−10
I
C
– V
CE
(low current region)
Common
emitter
Ta
= −55°C
(mA)
(mA)
−40
−8
−100
−90
−80
−4
−70
−60
−50
−2
−40
−30
−20
IB
= −10 μA
−240
−280
Collector current I
C
−6
Collector current I
C
−30
−6
−4
−20
−2
IB
= −10 μA
0
−40
−80
−120
−160
−200
−240
−280
0
0
0
0
0
−40
−80
−120
−160
−200
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage V
CE
(V)
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2011-01-24
2SA1384
h
FE
– I
C
500
1000
h
FE
– I
C
Common emitter
500
VCE =
−10
V
DC current gain h
FE
300 Common emitter
DC current gain h
FE
Ta
=
25°C
100
50
30
−1
VCE =
−10
V
300
Ta
=
100°C
100
50
30
25
−55
−5
10
−0.1
−0.3
−1
−3
−10
−30
−100
10
−0.1
−0.3
−1
−3
−10
−30
−100
Collector current I
C
(mA)
Collector current I
C
(mA)
V
CE (sat)
– I
C
−5
−10
V
BE (sat)
– I
C
Base-emitter saturation voltage
V
BE (sat)
(V)
Common emitter
−5
−3
IC/IB
=
10
Collector-emitter saturation voltage
V
CE (sat)
(V)
−3
Common emitter
IC/IB
=
10
−1
−0.5
−0.3
Ta
=
100°C
−0.1
−0.05
−0.03
−0.1
−0.3
−1
25
−55
−3
−10
−30
−100
−1
−0.5
−0.3
Ta
= −55°C
25
100
−0.1
−0.1
−0.3
−1
−3
−10
−30
−100
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
– I
C
500
Transition frequency f
T
(MHz)
Common emitter
300
Ta
=
25°C
Emitter input capacitance C
ib
(pF)
Collector output capacitance C
ob
(pF)
C
ib
, C
ob
– V
R
300
f
=
1 MHz
100
50
30
Cib (IC = 0A)
Ta
=
25°C
100
50
30
VCE =
−20
V
−10
−5
10
5
3
Cob (IE = 0A)
10
−0.3
−1
−3
−10
−30
1
0.1
0.3
1
3
10
30
100
300
Collector current I
C
(mA)
Reverse voltage
V
R
(V)
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2011-01-24
2SA1384
P
C
– Ta
1.2
(1)
( 1 ) Mounted on ceramic substrate
2
(250 mm
×
0.8 mm t)
( 2 ) No heat sink
0.8
−500
−300
Safe Operating Area
IC max (pulse)
*
IC max (continuous)
100 ms*
10 ms*
1 ms*
(W)
P
C
1.0
−100
Collector power dissipation
(mA)
Collector current I
C
(2)
−50
−30
DC operation
Ta
=
25°C
0.6
0.4
−10
−5
−3
0.2
0
0
−1
*:
Single no repetitive pulse
Ta
=
25°C
Curves must be derated linearly
−0.3
with increase in temperature.
Tested without a substrate.
−0.1
−1
−3
−10
−30
−100
−0.5
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
VCEO max
−300
−1000
Collector-emitter voltage
V
CE
(V)
5
2011-01-24
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