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2SA1384-O

Description
TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size207KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1384-O Overview

TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal

2SA1384-O Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment1 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
VCEsat-Max0.5 V
Base Number Matches1
2SA1384
TOSHIBA Transistor
Silicon PNP Triple Diffused Type (PCT process)
2SA1384
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: V
CBO
=
−300
V, V
CEO
=
−300
V
Low saturation voltage: V
CE (sat)
=
−0.5
V (max)
Small collector output capacitance: C
ob
= 6 pF (typ.)
Complementary to 2SC3515
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
−300
−300
−8
−100
−20
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
Weight: 0.05 g (typ.)
°C
°C
Note 1: 2SA1384 mounted on a ceramic substrate (250 mm
2
× 0.8 mm t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2011-01-24

2SA1384-O Related Products

2SA1384-O 2SA1384-R 2SA1384-O(TE12,F)
Description TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 ,
Reach Compliance Code unknow unknow unknown
Base Number Matches 1 1 1
Is it lead-free? Contains lead Contains lead -
Is it Rohs certified? incompatible incompatible -
Parts packaging code SC-62 SC-62 -
Contacts 3 3 -
ECCN code EAR99 EAR99 -
Shell connection COLLECTOR COLLECTOR -
Maximum collector current (IC) 0.1 A 0.1 A -
Collector-based maximum capacity 8 pF 8 pF -
Collector-emitter maximum voltage 300 V 300 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 50 30 -
JESD-30 code R-PSSO-F3 R-PSSO-F3 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type PNP PNP -
Maximum power consumption environment 1 W 1 W -
Maximum power dissipation(Abs) 1 W 1 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal form FLAT FLAT -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 70 MHz 70 MHz -
VCEsat-Max 0.5 V 0.5 V -
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