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2SA1195R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SA1195R Overview

Transistor

2SA1195R Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1195
DESCRIPTION
·With
TO-202 package
·High
power dissipation
·Complement
to type 2SC2483
APPLICATIONS
·For
high voltage and general
purpose amplification
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-6
-1.5
-0.5
2
UNIT
V
V
V
A
A
P
C
Collector power dissipation
T
C
=25℃
15
175
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature

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Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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