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20DL2CZ51A(Q)

Description
20DL2CZ51A(Q)
CategoryDiscrete semiconductor    diode   
File Size324KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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20DL2CZ51A(Q) Overview

20DL2CZ51A(Q)

20DL2CZ51A(Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
ECCN codeEAR99
Base Number Matches1
20DL2CZ51A,20FL2CZ51A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED)
SILICON EPITAXIAL TYPE
20DL2CZ51A,20FL2CZ51A
Unit: mm
5.5
Switching Mode Power Supply Applications
Converter & Chopper Applications
3. 6 MAX.
15.8
±
0.5
Ф3.6
±
0.2
3.5
Repetitive Peak Reverse Voltage:
Average Output Rectified Current:
Ultra Fast Reverse-Recovery Time:
V
RRM
= 200 V, 300 V
I
O
= 20 A
t
rr
= 35 ns (Max)
2.0
+0.25
1.0
-0.15
5.45
±
0.2
Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
20DL2CZ51A
20FL2CZ51A
SYMBOL
V
RRM
I
O
I
FSM
T
j
T
stg
RATING
200
300
20
100 (50 Hz)
110 (60 Hz)
−40
to 150
−40
to 150
UNIT
V
A
A
°C
°C
5.45
±
0.2
+0.2
3.15
-0.1
+0.25
0.6
-0.15
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sine Wave)
Junction Temperature
Storage Temperature Range
1.
2.
3.
ANODE
ANODE
CAT HODE
JEDEC
JEITA
TOSHIBA
12−16E1A
Weight: 5.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward
Voltage
20DL2CZ51A
20FL2CZ51A
SYMBOL
V
FM
I
RRM
t
rr
t
fr
R
th (j−c)
TEST CONDITION
I
FM
= 10 A
V
RRM
= Rated
I
F
= 2 A, di / dt =
50 A /
μs
I
F
= 1 A
Total DC, Junction to Case
MIN
TYP.
MAX
0.98
1.3
50
35
100
2.0
UNIT
V
μA
ns
ns
°C / W
Repetitive Peak ReverseCurrent
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
V
FM
, I
RRM
, t
rr
, t
fr
: A value applied to one cell.
POLARITY
1
2008-12-27
5.3
±
0.3
1
3
2
1.0
19.4 MIN.
21.0
±
0. 5
15.5

20DL2CZ51A(Q) Related Products

20DL2CZ51A(Q) 20FL2CZ51A(F)
Description 20DL2CZ51A(Q) 20FL2CZ51A(F)
Is it Rohs certified? conform to conform to
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Base Number Matches 1 1
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