Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1263N
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SC3180N
・2SA1263
with short pin
APPLICATIONS
・Power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
固电
IN
导½
半
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-80
-80
-5
-6
-0.6
UNIT
V
V
V
A
A
W
℃
℃
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
60
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1263N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-50mA ,I
B
=0
I
C
=-5A; I
B
=-0.5A
I
C
=-3A ; V
CE
=-5V
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
55
35
MIN
-80
-1.0
-0.95
-2.0
-1.5
-5
-5
160
TYP.
MAX
UNIT
V
V
V
μA
μA
固电
IN
Transition frequency
导½
半
Output capacitance
h
FE-1
Classifications
R
55-110
O
ANG
CH
MIC
E SE
I
E
=0 ; V
CB
=-10V ;f=1MHz
DUC
ON
30
OR
T
MHz
pF
290
80-160
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1263N
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1263N
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4
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