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2SC4793L-A-TF3-T

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size44KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SC4793L-A-TF3-T Overview

Power Bipolar Transistor

2SC4793L-A-TF3-T Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)1 A
Collector-emitter maximum voltage230 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
2SC4793
NPN SILICON TRANSISTOR
FEATURES
*High transition frequency
*Power amplifier applications
*Driver stage amplifier applications
1
NPN SILICON TRANSISTOR
TO-220F
*Pb-free plating product number:2SC4793L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC4793-x-TF3-T
2SC4793L-x-TF3-T
Package
TO-220F
Pin Assignment
1
2
3
B
C
E
Packing
Tube
2C4793L-x-TF3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) T: Tube
(2) TF3: TO-220F
(3) refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R219-009,B

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2SC4793L-A-TF3-T 2SC4793-B-TF3-T 2SC4793L-B-TF3-T 2SC4793-A-TF3-T
Description Power Bipolar Transistor Power Bipolar Transistor Power Bipolar Transistor Power Bipolar Transistor
Reach Compliance Code compli compli compli compli
Base Number Matches 1 1 1 1
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