UNISONIC TECHNOLOGIES CO., LTD
2SC4793
NPN SILICON TRANSISTOR
FEATURES
*High transition frequency
*Power amplifier applications
*Driver stage amplifier applications
1
NPN SILICON TRANSISTOR
TO-220F
*Pb-free plating product number:2SC4793L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC4793-x-TF3-T
2SC4793L-x-TF3-T
Package
TO-220F
Pin Assignment
1
2
3
B
C
E
Packing
Tube
2C4793L-x-TF3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) T: Tube
(2) TF3: TO-220F
(3) refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
NPN SILICON TRANSISTOR
RATINGS
UNIT
Collector-Base Voltage
230
V
Collector-Emitter Voltage
230
V
Emitter-Base Voltage
5
V
Collector Current
1
A
Base Current
0.1
A
Ta=25℃
2.0
W
Collector Power Dissipation
P
C
T
C
=25℃
20
W
Junction Temperature
T
J
+150
℃
Storage Temperature Range
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless others specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Base -Emitter Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
SYMBOL
BV
CEO
V
BE
V
CE(SAT)
I
CBO
I
EBO
h
FE
f
T
Cob
TEST CONDITIONS
I
C
=10mA
,
I
B
=0
V
CE
=5V
,
I
C
=500mA
I
C
=500mA
,
I
B
=50mA
V
CB
=230V
,
I
E
=0
V
EB
=5V
,
I
C
=0
V
CE
=5V
,
I
C
=100mA
V
CE
=10V
,
I
C
=100mA
V
CB
=10V
,
I
E
=0
,
f=1MHz
MIN
230
TYP
MAX
1.0
1.5
1.0
1.0
320
100
20
UNIT
V
V
V
µA
µA
MHz
pF
100
CLASSIFICATION OF h
FE
RANK
RANGE
A
100-200
B
180-320
UNISONIC TECHNOLOGIES CO., LTD
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TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Transition Frequency vs. Collector Current
1000
300
Collector Current
vs.
Base-Emitter Voltage
1.0
Transition Frequency, f
T
(MHz)
Common Emitter
V
CE
=10V
T
C
=25℃
0.8
Collector Current, I
C
(A)
100
0.6
T
C
=100
℃
25
-25
50
30
0.4
0.2
Common Emitter
V
CE
=5V
10
5
10
30
100
300
1000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector Current, I
C
(mA)
Base-Emitter Voltage, V
BE
(V)
DC Current Gain vs. Collector Current
Collector-Emitter Saturation Voltage, V
CE (SAT)
(V)
1000
Collector-Emitter Saturation Voltage vs. Collector Current
1
Common Emitter
V
CE
=5V
Common Emitter
I
C
/I
B
=10
T
C
=100℃
25
-25
500
300
0.5
0.3
DO Current Gain, h
FE
T
C
=100°C
100
0.1
50
30
25
-25
0.05
0.03
10
0.003
0.01
0.03
0.1
0.3
1
3
0.01
0.003
0.01
0.03
0.1
0.3
1
3
Collector Current, I
C
(A)
Collector Current, I
C
(A)
Collector Current vs. Collector-Emitter Voltage
1.0
20
10
3
5
Safe Operating Area
8
0.8
Collector Current, I
C
(A)
I
C
MAX. (Pulsed)※
I
C
MAX.
(Continuous)
6
1
1ms※
10ms※
100ms※
Collector Current, I
C
(A)
0.5
0.3
0.6
4
DC Operation
T
C
=25℃
0.4
I
B
=2mA
0.1
0.05
0.2
Common Emitter
T
C
=25℃
2
4
6
8
10
Collector-Emitter Voltage, V
CE
(V)
※Single
Nonrepetitive
0.03
Pulse T
C
=25°C Curves Must
be Derated Linearly With
Increase in Temperature.
0.01
1
3
10
30
V
CEO
MAX .
100
300
0
0
Collector-Emitter Voltage, V
CE
(V)
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NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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