WESTCODE
Date:- 14 Aug, 2002
Data Sheet Issue:- 1
An IXYS Company
Medium Voltage Thyristor
Types K0769NC600 to K0769NC650
Old Type No.: P410CH65
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
It
di
T
/dt
V
RGM
P
G(AV)
P
GM
T
HS
T
stg
2
2
MAXIMUM
LIMITS
769
535
330
1506
1332
8600
9500
370×10
451×10
150
300
5
2
30
-40 to +115
-40 to +150
3
3
UNITS
A
A
A
A
A
A
A
As
As
A/µs
A/µs
V
W
W
°C
°C
2
2
Mean on-state current, T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
2
2
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 115°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1
Page 1 of 11
August, 2002
WESTCODE
An IXYS Company
Characteristics
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
PARAMETER
V
TM
V
0
r
s
dv/dt
I
DRM
I
RRM
V
tr
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
On-state recovery voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
Turn-off time
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
12
-
-
-
-
0.5
2.8
3100
2000
135
30
900
1200
-
-
-
510
MAX. TEST CONDITIONS
(Note 1)
2.75
1.566
1.172
-
50
50
-
3.0
300
0.25
1000
1.5
4.0
-
2400
-
-
-
-
0.024
0.048
26
-
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=33%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V
V
D
=80% V
DRM
, linear ramp, gate o/c
Rated V
DRM
Rated V
RRM
I
TM
=2300A, t
p
=10ms, T
case
=25°C
T
j
=25°C, V
D
=10V, I
T
=3A
Rated V
DRM
T
j
=25°C
V
D
=67%V
DRM
, I
TM
=1000A, di/dt=10A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
I
TM
=1000A
UNITS
V
V
mΩ
V/µs
mA
mA
V
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
R
th(j-hs)
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=115
°
C.
-
-
19
-
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1
Page 2 of 11
August, 2002
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
60
61
62
63
64
65
V
DRM
V
DSM
V
RRM
V
6000
6100
6200
6300
6400
6500
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
V
RSM
V
6100
6200
6300
6400
6500
6600
V
D
V
R
DC V
3000
3050
3100
3150
3200
3250
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
9.0 Duty cycle lines
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1
Page 3 of 11
August, 2002
WESTCODE
An IXYS Company
10.0 Gate Drive
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
I
GM
4A/µs
I
G
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
I
AV
=
−
V
0
+
V
0
+
4
⋅
ff
⋅
r
s
⋅
W
AV
2
⋅
ff
⋅
r
s
2
W
AV
=
and:
∆
T
R
th
∆
T
=
T
j
max
−
T
Hs
Where V
0
=1.566V, r
s
=1.172mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
30°
0.0293
0.0534
0.0286
0.0531
60°
0.0285
0.053
0.0276
0.0523
90°
0.0278
0.0524
0.0269
0.0517
120°
0.0271
0.0518
0.0263
0.0511
180°
0.0261
0.0509
0.0248
0.0497
270°
0.0249
0.0497
d.c.
0.024
0.048
Form Factors
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
2.449
2.778
90°
2
2.22
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1
Page 4 of 11
August, 2002
WESTCODE
An IXYS Company
11.2 Calculating V
T
using ABCD Coefficients
Medium Voltage Thyristor Types K0769NC600 to K0769NC650
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i)
the well established V
0
and r
s
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A
B
C
D
3.3100044
-0.329322
7.352344×10
0.02672716
-4
115°C Coefficients
A
B
C
D
0.7108278
0.1494583
1.110708×10
-3
-3
-3.287414×10
11.3 D.C. Thermal Impedance Calculation
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
p
=
n
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
The coefficients for this device are shown in the tables below:
D.C. Double Side Cooled
Term
1
0.01249139
0.8840810
2
6.316833×10
0.1215195
-3
3
1.850855×10
0.03400152
-3
4
1.922045×10
6.742908×10
-3
-3
5
6.135330×10
1.326292×10
-4
-3
r
p
τ
p
D.C. Single Side Cooled
Term
1
0.02919832
6.298105
2
4.863568×10
3.286174
-3
3
3.744798×10
0.5359179
-3
4
6.818034×10
0.1186897
-3
5
2.183558×10
0.02404574
-3
6
1.848294×10
3.379476×10
-3
-3
r
p
τ
p
Data Sheet. Types K0769NC600 to K0769NC650 Issue 1
Page 5 of 11
August, 2002
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