J
, U
na.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
2SA1263
DESCRIPTION
• Low Collector Saturation Voltage-
: V
C
E(sa.r -2.0V(Min) @l
c
= -5A
• Good Linearity of h
F
E
• Complement to Type 2SC3180
PIN 1.BASE
2.COLLECTOR
3. BETTER
APPLICATIONS
• Power amplifier applications
• Recommend for 40W high fidelity audio frequency
amplifier output stage applications
TC-3PI package
-
<Qi
A
B
»-
*!
-*• C •*-
S-- •*-
C
- t
;: i
*
:* "
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
?i._ „
*H
»
K
»
'
;
+
_J ,. , . . . .
\
'""
:
'k
i
-*. *«-L
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
-*-N
_».
*-^J
_».
R
^-^
«--^D
VEBO
Emitter-Base Voltage
-5
V
mm
MIN
DIM
MAX
19,60 20,10
A
B 15,30 15.70
4.60
C
4.00
1.10
D
0.90
3.20
3.40
F
2.SO
H
3.10
J
0,50
0.70
19.90 21.30
K
2,20
L
1.20
N
10,80 11.00
Q
4,40
4.60
R
3.30
3.35
S
1.40
1.60
T
1,00
1.20
2.10
U
2.30
z
9.10
7.90
Ic
Collector Current-Continuous
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25'C
Junction Temperature
-0.6
A
PC
60
W
Tj
150
"C
Tstg
Storage Temperature Range
-55-150
'C
NJ Semi-Coikluctors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
lo press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheels are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1263
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc= -50mA; le= 0
-80
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= -5A; I
B
= -0.5A
-2.0
V
VBE(on)
Base-Emitter On Voltage
lc= -3A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -80V; |
E
= 0
-5
MA
IEBO
Emitter Cutoff Current
VEB= -5V; l
c
= 0
-5
UA
hpE-1
DC Current Gain
lc= -1A; V
CE
= -5V
55
160
hFE-2
DC Current Gain
lc= -3A; V
CE
= -5V
35
COB
Output Capacitance
I
E
=0; VCB= -10V; f
lest
= 1 .0MHz
290
PF
ft
Current-Gain — Bandwidth Product
lc=-1A; V
CE
= -5V
30
MHz
hpE-1 Classifications
R
O
55-110
80-160
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