J.£.ii.E.u ^£.mi-
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1265
DESCRIPTION
• Low Collector Saturation Voltage-
: V
CE(sat)
= -2.0V(Min) @l
c
= -7A
• Good Linearity of h
F
E
• Complement to Type 2SC3182
PIN 1.BASE
2.
COLLECTOR
3. EMITTER
APPLICATIONS
• Power amplifier applications
• Recommend for 70W high fidelity audio frequency
amplifier output stage applications
TG-2.PI package
-
B
•-
£
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•
i»
A
•
~* C
•«-
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• - , » ; :- i
"' M
'z
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:
,
r
F
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
*r
*H
<
i
K
..
-* ;
•
; •
i
-*• -«-L
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
-140
V
«
-«-N
-*•
VEBO
Emitter-Base Voltage
-5
V
*^j
-*R-»-
.*-^_D
mm
MIN
DIM
MAX
19.60 20.10
A
15.70
B
15,30
4,60
C
4-, 00
1.10
D
0.90
3.20
3,40
F
2,90
H
3,10
.j
0,50
0.70
19,90 21,30
K
2.20
L
1.20
N
10.80 11.00
Q
4.40
4.60
R
3.30
3.35
S
1.40
1.60
1
1.00
1.20
U
2.10
2,30
Z
9.10
7.90
Ic
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25'C
Junction Temperature
-1
A
PC
100
W
Tj
150
"C
Tstg
Storage Temperature Range
-55-150
'C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Infbnnation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
aoi,
to press. However, NJ Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before plueiniz orders.
Qualify Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1265
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
l
c
= -50mA; I
B
= 0
-140
V
VcE(sat)
Collector-Emitter Saturation Voltage
lc= -7A; I
B
= -0.7A
-2.0
V
VBEIOH)
Base-Emitter On Voltage
l
c
= -5A ; V
CE
= -5V
-1.5
V
ICBO
Collector Cutoff Current
V
C
B=-140V;I
E
=0
-5
u A
IEBO
Emitter Cutoff Current
VEB- -5V; l
c
= 0
-5
MA
hpE-1
DC Current Gain
lc= -1A; V
CE
= -5V
55
160
hFE-2
DC Current Gain
lc= -5A; VCE= -5V
35
COB
Output Capacitance
!E=O; V
CB
= -10V; f,
e
st= 1.0MHz
lc= -1A; V
CE
= -5V
480
PF
fr
Current-Gain — Bandwidth Product
30
MHz
hpE-1 Classifications
R
0
55-110
80-160
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