2N1597 datasheet, PDF - EEWORLD Datasheet

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2N1597: DescriptionSilicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-5; CategoryAnalog mixed-signal IC Trigger device; File Size225KB，4 Pages; ManufacturerSemitronics Corp.; Related ProductsFound18parts with similar functions to 2N1597

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2N1597 Overview

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-5

2N1597 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Nominal circuit commutation break time	10 µs
Configuration	SINGLE
Maximum DC gate trigger current	10 mA
Maximum DC gate trigger voltage	3 V
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
Maximum leakage current	6 mA
On-state non-repetitive peak current	15 A
Number of components	1
Number of terminals	3
Maximum on-state current	1600 A
Maximum operating temperature	125 °C
Minimum operating temperature	-60 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Certification status	Not Qualified
Maximum rms on-state current	1.6 A
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Trigger device type	SCR
Base Number Matches	1

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2N1597 Similar Products

Part Number	Manufacturer	Description
2N1597	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 1; Capacitance: 5; Package: TO-39
2N1597LEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 1.6A I(T)RMS, 200V V(RRM), 1 Element, TO-39
2N3027	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18
2N2328	SSDI	Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN
2N6396	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM)
2N6402	Toshiba(东芝)	SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220
C126F	Semitronics Corp	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
BT151X-650R,127	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3
2N1772A	SSDI	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N1776A	SSDI	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N879	Digitron	SILICON CONTROLLED RECTIFIER
2N1880	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5
C15F	Semitronics Corp	Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64
MCR718	Central Semiconductor	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS
2N2327	New Jersey Semiconductor	Thyristor SCR 250V 15A 3-Pin TO-39
2N1802	Vishay(威世)	Silicon Controlled Rectifier, 110 A, 800 V, SCR, TO-208AD, TO-83, 2 PIN
CS29-08IO1C	IXYS	Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN
S2025L	Littelfuse	SCRs 25A 200V

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